BF722,115 datasheet

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• Маркировка
  BF722,115
• Производитель
  NXP Semiconductors
• Описание
  NXP Semiconductors BF722,115 Current - Collector (ic) (max): 100mA Current - Collector Cutoff (max): - Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 25mA, 20V Frequency - Transition: 60MHz Lead Free Status / Rohs Status: Lead free / RoHS Compliant Mounting Type: Surface Mount Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261 Power - Max: 1.2W Series: - Transistor Type: NPN Vce Saturation (max) @ Ib, Ic: 600mV @ 5mA, 30mA Voltage - Collector Emitter Breakdown (max): 250V Product Category: Transistors Bipolar - BJT RoHS: yes Configuration: Single Transistor Polarity: NPN Collector- Base Voltage VCBO: 250 V Collector- Emitter Voltage VCEO Max: 250 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 0.1 A Gain Bandwidth Product fT: 60 MHz DC Collector/Base Gain hfe Min: 50 at 25 mA at 20 V Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT DC Current Gain hFE Max: 50 at 25 mA at 20 V Maximum Power Dissipation: 1200 mW Minimum Operating Temperature: - 65 C Factory Pack Quantity: 1000 Part # Aliases: BF722 T/R Other Names: 933917370115, BF722 T/R
• Количество страниц
  6 шт.
• Формат
  PDF

  (Для просмотра требуется Adobe Acrobat Reader)
• Размер файла
  58,72 KB

BF722,115 datasheet скачать

BF722,115 datasheet